free standing gan substrates online manufacture

5*10.5mm2 SP-face (20-21)/(20-2-1) Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 cm RF devices wafer Overview Gallium Nitride (GaN) substrate is a high-quality single-crystal ... Read More

5*10mm2 SP-face (20-21)/(20-2-1) Un-doped SI-type Free-standing GaN single crystal substrate Resistivity > 106 cm RF devices wafer Overview Different Types of Generative Adversarial Networks (GANs) DC GAN It is ... Read More

5*10mm2 Free-Standing GaN Single Crystal Substrate (20-21)/(20-2-1) Un-Doped SI-Type 5*10mm2 SP-face (20-21)/(20-2-1) Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 cm RF devices ... Read More

5 X 10 mm2 M Face Free-Standing GaN Substrates Thickness 350 25 m 5*10mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 cm Power device/laser wafer Overview These GaN ... Read More

2inch C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 cm Power device/laser wafer Overview High-quality GaN free-standing substrates with low dislocation density suitable for ... Read More

(1- 100) 0.1o, 12.5 1 mm 2-Inch Free-Standing N-GaN Substrates GaN-FS-C-N-C50-SSP 2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 cm Power device/laser wafer Growth of ... Read More

2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 cm Power device/laser wafer Overview One of the key methods used to fabricate these devices is a light n-type doping of ... Read More

5*10mm2 M-face Un-doped n-type Free-standing GaN single crystal substrate Resistivity < 0.1 cm Power device/laser wafer Overview Various physical aspects and potential applications of the laser-induced ... Read More

10*10.5mm C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 cm Power device/laser Overview Gallium Nitride (GaN) substrate is a high-quality single-crystal substrate. It is ... Read More

Thickness 400 30 m 2-Inch Free-Standing N-GaN Substrates Dimensions 50.0 0.3 mm 2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 cm Power device/laser wafer Overview ... Read More